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| Product Bulletin OP705 March 1999 NPN Phototransistor with Base-Emitter Resistor Types OP705A, OP705B, OP705C, OP705D Features * * * * Narrow receiving angle Variety of sensitivity ranges T-1 package style Small package size for space limited applications * Base-emitter resistor provides ambient light protection Absolute Maxi mum Ratings (TA = 25o C unless otherwise noted) Collector-Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter Reverse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Collector DC Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Storage and Operating Temperature Range. . . . . . . . . . . . . . . . . . -40o C to +100o C Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 sec. with soldering iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1) Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) O-ae (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW /o C above 25 o C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) The knee point irradiance is defined as the irradiance required to increase IC(ON) to 50** A. Description The OP705 series devices consist of NPN silicon phototransistors molded in blue tinted epoxy packages. The narrow receiving angle provides excellent onaxis coupling. These devices are 100% production tested using infrared light for close correlation with Optek's GaAs and GaAlAs emitters. The phototransistor has an internal baseemitter resistor which provides protection from low level ambient lighting conditions. This feature is also useful when the media being detected is semitransparent to infrared light in interruptive applications. Typical Performance Curves I*1/2 I1/2(R) I-- Schematic E o Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 5 (972) 323-2200 Fax (972) 323-2396 Types OP705A, OP705B, OP705C, OP705D Electrical Characteristics (TA = 25o C unless otherwise noted) SYMBOL PARAMETER On-State Collector Current IC(ON) OP705A OP705B OP705C OP705D MIN TYP MAX UNITS 3.95 2.65 1.50 1.50 .02 100 100 30 0.4 12.0 7.25 4.85 12.0 TEST CONDITIONS VCE = 5 V, Ee = .50 mW/cm 2(3) mA EKP ICEO IECO V(BR)CEO VCE(SAT) Knee Point Irradiance Collector-Emitter Dark Current Emitter-Reverse Current Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage mW/cm2 VCE = 5 V(4) nA A V V VCE = 10 V, Ee = 0 VEC = 0.4 V IC = 100 A IC = 250 A, Ee = .50 mW/cm 2(3) Typical Performance Curves Normalized Collector Current vs. Angular Displacement Normalized Light and Dark Current vs. Ambient Temperature i i i O* Y(R)(R) oi oi On-State Collector Current vs. Irradiance Nee Nee U(R) Y(R)(R) oi oi oi oi oi E YU a e E OUUae * a cie oi i * - Angular Displacement - Deg. I o 3/4* I(R)(R) o **Y Ee - Irradiance - mW/cm2 Normalized Output vs. Frequency io VRL = 1 V VCE = 5 V 50% Duty Cycle LED: * = 935 nm Typical Rise and Fall Time vs. Load Resistance ii ie c ee VCC = 5 V VRL = 1 V f = 100 Hz PW = 1 mS LED = GaAIAS, * = 890 nm VRL is voltage across R L Switching Time Test Circuit oe IO a iO* IO a iO* e ie i ie i i i i i i e e i I- Y1/4**-ae O* -(R)1/2 *- -1/4 OUU (c)*o (R) 1/4 * e -o xU *- 1/4-1/4 (R) ENEI a i Eo o Frequency - KHz IO o O1/4 I-*-1/2 o O* Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible. Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396 6 |
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